HSM4435
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM4435
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.6
nC
trⓘ - Rise Time: 14.8
nS
Cossⓘ -
Output Capacitance: 194
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
SOP8
HSM4435
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM4435
Datasheet (PDF)
..1. Size:509K huashuo
hsm4435.pdf
HSM4435 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4435 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -9.5 A The HSM4435 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
9.1. Size:2056K huashuo
hsm4410.pdf
HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C
9.2. Size:841K huashuo
hsm4407.pdf
HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio
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