All MOSFET. HSM4435 Datasheet

 

HSM4435 Datasheet and Replacement


   Type Designator: HSM4435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.8 nS
   Cossⓘ - Output Capacitance: 194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

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HSM4435 Datasheet (PDF)

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HSM4435

HSM4435 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4435 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -9.5 A The HSM4435 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.1. Size:2056K  huashuo
hsm4410.pdf pdf_icon

HSM4435

HSM4410 Description Product Summary The HSM4410 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 9.5 m converter applications. ID 12 A The HSM4410 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gate C

 9.2. Size:841K  huashuo
hsm4407.pdf pdf_icon

HSM4435

HSM4407 P-Ch 30V Fast Switching MOSFETs General Description Product Summary The HSM4407 is the high cell density trenched P- VDS -30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 15 m gate charge for most of the synchronous buck converter applications. ID -11.5 A The HSM4407 meet the RoHS and Green Product requirement 100% EAS guaranteed with full functio

Datasheet: HSM4094 , HSM4103 , HSM4113 , HSM4115 , HSM4204 , HSM4313 , HSM4407 , HSM4410 , 7N65 , HSM4606 , HSM4805 , HSM6032 , HSM6113 , HSM6115 , HSM6303 , HSM6901 , HSM9926 .

History: JCS9N50FT | IRLR3105PBF

Keywords - HSM4435 MOSFET datasheet

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