HSP150N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSP150N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 135 nC
Rise Time (tr): 39 nS
Drain-Source Capacitance (Cd): 569 pF
Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm
Package: TO220
HSP150N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSP150N02 Datasheet (PDF)
hsp150n02.pdf
HSP150N02 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSP150N02 is the highest performance VDS 150 V trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate RDS(ON),typ 12 m charge for most of the synchronous buck ID 120 A converter applications. The HSP150N02 meet the RoHS and Green Product requirement, 100% EA
hsp150n15.pdf
HSP150N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSP150N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 5 m and gate charge for most of the synchronous buck converter applications. ID 150 A The HSP150N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
hsp15810c.pdf
HSP15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description V 100% EAS Guaranteed DS 100 V Green Device Available R 4.7 m DS(ON),typ Super Low RDS (ON) Advanced high cell density Trench I 120 A D technology TO220 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous recti
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
