HSU3014
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSU3014
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 37.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 43
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 9.8
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 131
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO252
HSU3014
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSU3014
Datasheet (PDF)
..1. Size:2272K huashuo
hsu3014.pdf
HSU3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3014 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 12 m converter applications. ID 43 A The HSU3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit
8.1. Size:695K huashuo
hsu3018b.pdf
HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel
8.2. Size:2270K huashuo
hsu3016.pdf
HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability
9.1. Size:2447K huashuo
hsu3031.pdf
HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
9.2. Size:2281K huashuo
hsu3006.pdf
HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili
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