HSU4113
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSU4113
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 31.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 12.8
nS
Cossⓘ -
Output Capacitance: 108
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO252
HSU4113
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSU4113
Datasheet (PDF)
..1. Size:2246K huashuo
hsu4113.pdf
HSU4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID -23 A The HSU4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
8.1. Size:2277K huashuo
hsu4115.pdf
HSU4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSU4115 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 13 m converter applications. ID -52 A The HSU4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
9.1. Size:2263K huashuo
hsu4103.pdf
HSU4103 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSU4103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID -27 A The HSU4103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
Datasheet: WPB4002
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