HSU6014
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSU6014
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 16.6
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO252
HSU6014
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSU6014
Datasheet (PDF)
..1. Size:2275K huashuo
hsu6014.pdf
HSU6014 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSU6014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSU6014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
9.1. Size:494K huashuo
hsu6004.pdf
HSU6004 N-Ch 60V Fast Switching MOSFETs Description Product Summary V 60 V DSThe HSU6004 is the high cell density trenched N-ch MOSFETs, which provide excellent R 30 m DS(ON),maxRDSON and gate charge for most of the synchronous buck converter applications. I 23 A DThe HSU6004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
9.2. Size:1455K huashuo
hsu60n02.pdf
HSU60N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU60N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 4 m gate charge for most of the synchronous buck converter applications. ID 60 A The HSU60N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
9.3. Size:477K huashuo
hsu60p03.pdf
HSU60P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU60P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 7.5 m gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
9.4. Size:469K huashuo
hsu6006.pdf
HSU6006 N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSU6006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDS(ON),max 20 m RDSON and gate charge for most of the synchronous buck converter applications. ID 35 A The HSU6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit
9.5. Size:700K huashuo
hsu6008.pdf
HSU6008 N-Ch 60V Fast Switching MOSFETs Product Summary Description V 60 V DSThe HSU6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON R 100 m DS(ON),maxand efficiency for most of the small power switching and load switch applications. I 10 A DThe HSU6008 meet the RoHS and Green Product requirement with full function reliability a
9.6. Size:2276K huashuo
hsu6040.pdf
HSU6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 112 A The HSU6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
9.7. Size:2407K huashuo
hsu6032.pdf
HSU6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 8.5 m converter applications. ID 75 A The HSU6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili
9.8. Size:626K huashuo
hsu6002.pdf
HSU6002 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6002 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 70 m DS(ON),maxconverter applications. I 17 A DThe HSU6002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
9.9. Size:519K huashuo
hsu60p02.pdf
HSU60P02 P-Ch 20V Fast Switching MOSFETs Description Product Summary VDS -20 V The HSU60P02 is the high cell density trenched P-ch MOSFETs, which provide excellent RDS(ON),typ 6.6 m RDSON and gate charge for most of the synchronous buck converter applications. ID -60 A The HSU60P02 meet the RoHS and Green Product requirement with full function reliability approved.
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