All MOSFET. SVF4N60M Datasheet

 

SVF4N60M Datasheet and Replacement


   Type Designator: SVF4N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 37.3 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
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SVF4N60M Datasheet (PDF)

 ..1. Size:800K  silan
 svf4n60d svf4n60f svf4n60t svf4n60m.pdf pdf_icon

SVF4N60M

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

 ..2. Size:479K  silan
 svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf pdf_icon

SVF4N60M

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

 7.1. Size:801K  1
 svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf pdf_icon

SVF4N60M

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

 7.2. Size:473K  silan
 svf4n60caf svf4n60cak svf4n60cat svf4n60cadtr svf4n60camn svf4n60camj.pdf pdf_icon

SVF4N60M

SVF4N60CAF/K/D/T/MN/MJ 4A600V N 2 SVF4N60CAF/K/D/T/MN/MJ N MOS 13 F-CellTM VDMOS 1TO-252-2L3

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History: AMD510C | AU7N60S | IRFU320A | IPI80N03S4L-03 | MMBF170L | PE507BA | IRFIBC30G

Keywords - SVF4N60M MOSFET datasheet

 SVF4N60M cross reference
 SVF4N60M equivalent finder
 SVF4N60M lookup
 SVF4N60M substitution
 SVF4N60M replacement

 

 
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