SVF4N60RDM MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

SVF4N60RDM Specs and Replacement

Type Designator: SVF4N60RDM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.36 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO251

SVF4N60RDM substitution

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SVF4N60RDM datasheet

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