SVF4N60RDM Datasheet and Replacement
Type Designator: SVF4N60RDM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26.36 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO251
SVF4N60RDM substitution
SVF4N60RDM Datasheet (PDF)
svf4n60rd svf4n60rdm.pdf
SVF4N60RD(M) 4A600V N SVF4N60RD(M) N MOS F-CellTM VDMOS AC-DC
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf
SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc
svf4n60d svf4n60f svf4n60t svf4n60m.pdf
SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS
svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf
SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3
Datasheet: SVF3N80MJ , SVF3N80T , SVF3N80F , SVF3N80D , SVF4N60D , SVF4N60T , SVF4N60M , SVF4N60F , IRF520 , SVF4N60RD , SVF4N65CAF , SVF4N65CAD , SVF4N65CAM , SVF4N65CAMJ , SVF4N65CAMN , SVF4N65CAK , SVF4N65D .
History: 2SK2834-01 | MCP87130 | SI4340DDY | SVF4N65CAD | FQPF6N25 | AP16T10GH | APM9953
Keywords - SVF4N60RDM MOSFET datasheet
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History: 2SK2834-01 | MCP87130 | SI4340DDY | SVF4N65CAD | FQPF6N25 | AP16T10GH | APM9953
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