SVF4N65RT Specs and Replacement

Type Designator: SVF4N65RT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220

SVF4N65RT substitution

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SVF4N65RT datasheet

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SVF4N65RT

SVF4N65RD/M/MJ/F/T 4A 650V N 2 SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒

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SVF4N65RT

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SVF4N65RT

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SVF4N65RT

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Detailed specifications: SVF4N65CAMJ, SVF4N65CAMN, SVF4N65CAK, SVF4N65D, SVF4N65RD, SVF4N65RM, SVF4N65RMJ, SVF4N65RF, K2611, SVF5N60K, SVF5N65D, SVF5N65F, SVF6N60MJ, SVF6N60F, SVF6N60D, SVF6N70F, SVF740MJ

Keywords - SVF4N65RT MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility