SVF6N60MJ Specs and Replacement

Type Designator: SVF6N60MJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42.67 nS

Cossⓘ - Output Capacitance: 83.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251J

SVF6N60MJ substitution

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SVF6N60MJ datasheet

 ..1. Size:547K  silan
 svf6n60mj svf6n60f svf6n60d.pdf pdf_icon

SVF6N60MJ

SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit... See More ⇒

 7.1. Size:452K  silan
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SVF6N60MJ

SVF6N60F/D/FQ 6A 600V N 2 SVF6N60F/D/FQ N MOS F-CellTM VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒

 9.1. Size:344K  silan
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SVF6N60MJ

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 9.2. Size:316K  silan
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SVF6N60MJ

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Detailed specifications: SVF4N65RD, SVF4N65RM, SVF4N65RMJ, SVF4N65RF, SVF4N65RT, SVF5N60K, SVF5N65D, SVF5N65F, AOD4184A, SVF6N60F, SVF6N60D, SVF6N70F, SVF740MJ, SVF7N60CF, SVF7N60CS, SVF7N60CK, SVF7N60CMJ

Keywords - SVF6N60MJ MOSFET specs

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