All MOSFET. SVF6N60MJ Datasheet

 

SVF6N60MJ Datasheet and Replacement


   Type Designator: SVF6N60MJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42.67 nS
   Cossⓘ - Output Capacitance: 83.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251J
 

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SVF6N60MJ Datasheet (PDF)

 ..1. Size:547K  silan
 svf6n60mj svf6n60f svf6n60d.pdf pdf_icon

SVF6N60MJ

SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

 7.1. Size:452K  silan
 svf6n60f svf6n60dtr svf6n60fq.pdf pdf_icon

SVF6N60MJ

SVF6N60F/D/FQ 6A600V N 2SVF6N60F/D/FQ N MOS F-CellTM VDMOS 11 3 TO-252-2L3

 9.1. Size:344K  silan
 svf6n80dtr svf6n80k svf6n80mj.pdf pdf_icon

SVF6N60MJ

SVF6N80D(K) 6A800V N 2SVF6N80D(K)(MJ) N MOS F-CellTM VDMOS 1 3

 9.2. Size:316K  silan
 svf6n70f.pdf pdf_icon

SVF6N60MJ

SVF6N70F 6A700V N 2SVF6N70F N MOS F-CellTM VDMOS 13

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Datasheet: SVF4N65RD , SVF4N65RM , SVF4N65RMJ , SVF4N65RF , SVF4N65RT , SVF5N60K , SVF5N65D , SVF5N65F , HY1906P , SVF6N60F , SVF6N60D , SVF6N70F , SVF740MJ , SVF7N60CF , SVF7N60CS , SVF7N60CK , SVF7N60CMJ .

History: STF21N65M5 | MTP3401N3

Keywords - SVF6N60MJ MOSFET datasheet

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