SVF7N60CS MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVF7N60CS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 122 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 32.7 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263

SVF7N60CS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVF7N60CS Datasheet (PDF)

..1. Size:783K silan
svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

..2. Size:452K silan
svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3

7.1. Size:512K silan
svf7n60f svf7n60s svf7n60d.pdf

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC

7.2. Size:627K silan
svf7n60t svf7n60f.pdf

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

8.1. Size:407K silan
svf7n65f svf7n65s svf7n65str svf7n65t.pdf

SVF7N65T/F/S 7A650V N 2 SVF7N65T/F/S N MOS 1 F-CellTM VDMOS 31. 2. 3.

8.2. Size:321K silan
svf7n65cfjh.pdf

SVF7N65CFJH 7A650V N 2SVF7N65CFJH N MOS F-CellTM VDMOS 13

8.3. Size:626K silan
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65cs svf7n65cfq.pdf

SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS

8.4. Size:575K silan
svf7n65t svf7n65f svf7n65s.pdf

SVF7N65T/F/S 7A650V N SVF7N65T/F/S N MOS F-CellTM VDMOS AC-DC

8.5. Size:623K silan
svf7n65f-t.pdf

SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

8.6. Size:641K silan
svf7n65cf svf7n65cd svf7n65cmj svf7n65ck svf7n65ct.pdf