SVF7N60CD Specs and Replacement

Type Designator: SVF7N60CD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.7 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO252

SVF7N60CD substitution

- MOSFET ⓘ Cross-Reference Search

 

SVF7N60CD datasheet

 ..1. Size:783K  silan
 svf7n60cf svf7n60cs svf7n60ck svf7n60cmj svf7n60cd svf7n60ct.pdf pdf_icon

SVF7N60CD

SVF7N60CF/S/K/MJ/D/T 7A 600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS ... See More ⇒

 ..2. Size:452K  silan
 svf7n60cf svf7n60cs svf7n60cstr svf7n60ck svf7n60cmj svf7n60cd svf7n60cdtr svf7n60ct.pdf pdf_icon

SVF7N60CD

... See More ⇒

 7.1. Size:512K  silan
 svf7n60f svf7n60s svf7n60d.pdf pdf_icon

SVF7N60CD

... See More ⇒

 7.2. Size:627K  silan
 svf7n60t svf7n60f.pdf pdf_icon

SVF7N60CD

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒

SHOW MORE

Detailed specifications: SVF6N60F, SVF6N60D, SVF6N70F, SVF740MJ, SVF7N60CF, SVF7N60CS, SVF7N60CK, SVF7N60CMJ, IRF840, SVF7N60CT, SVF7N60F, SVF7N60S, SVF7N60D, SVF7N65CF, SVF7N65CD, SVF7N65CMJ, SVF7N65CK

Keywords - SVF7N60CD MOSFET specs

 SVF7N60CD cross reference

 SVF7N60CD equivalent finder

 SVF7N60CD pdf lookup

 SVF7N60CD substitution

 SVF7N60CD replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.