SVF7N60CT
MOSFET. Datasheet pdf. Equivalent
Type Designator: SVF7N60CT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 145
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21.1
nC
trⓘ - Rise Time: 32.7
nS
Cossⓘ -
Output Capacitance: 96
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO220
SVF7N60CT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVF7N60CT
Datasheet (PDF)
7.2. Size:627K silan
svf7n60t svf7n60f.pdf
SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
8.2. Size:321K silan
svf7n65cfjh.pdf
SVF7N65CFJH 7A650V N 2SVF7N65CFJH N MOS F-CellTM VDMOS 13
8.5. Size:623K silan
svf7n65f-t.pdf
SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: WPB4002
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