SVF7N60F Specs and Replacement

Type Designator: SVF7N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.7 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

SVF7N60F substitution

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SVF7N60F datasheet

 ..1. Size:512K  silan
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SVF7N60F

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 ..2. Size:627K  silan
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SVF7N60F

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒

 7.1. Size:783K  silan
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SVF7N60F

SVF7N60CF/S/K/MJ/D/T 7A 600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS ... See More ⇒

 7.2. Size:452K  silan
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SVF7N60F

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Detailed specifications: SVF6N70F, SVF740MJ, SVF7N60CF, SVF7N60CS, SVF7N60CK, SVF7N60CMJ, SVF7N60CD, SVF7N60CT, IRF540N, SVF7N60S, SVF7N60D, SVF7N65CF, SVF7N65CD, SVF7N65CMJ, SVF7N65CK, SVF7N65CS, SVF7N65CFQ

Keywords - SVF7N60F MOSFET specs

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