STD10N10T4
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD10N10T4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
DPAK
STD10N10T4
Datasheet (PDF)
6.2. Size:119K samhop
stu10n10 std10n10.pdf
STU10N10GreenProductSTD10N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.620 @ VGS=10VTO-252 and TO-251 Package.100V 5A721 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )
8.1. Size:1627K st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch
8.2. Size:901K st
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
8.3. Size:868K st
std10nf30.pdf
STD10NF30Automotive-grade N-channel 300 V, 10 A, 0.28 typ., MESH OVERLAY Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTD10NF30 300 V 0.33 10 A TAB Designed for automotive applications and 3AEC-Q101 qualified1 Gate charge minimizedDPAK Very low intrinsic capacitancesApplications Switching appli
8.4. Size:997K st
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
8.5. Size:1072K st
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V
8.6. Size:525K st
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf
STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V
8.7. Size:457K st
std10nf10-1 std10nf10t4 std10nf10.pdf
STD10NF10STD10NF10-1N-channel 100V - 0.115 - 13A - DPAK - IPAKLow gate charge STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD10NF10 100V
8.8. Size:1129K st
std10nm60nd stf10nm60nd stp10nm60nd.pdf
STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. jmax.STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance
8.9. Size:302K st
std10nf06l.pdf
STD10NF06LN-CHANNEL 60V - 0.1 - 10A DPAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD10NF06L 60V
8.10. Size:849K st
std10nf10t4.pdf
STD10NF10T4 N-channel 100 V, 0.115 typ., 13 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD10NF10T4 100 V 0.130 13 A Exceptional dv/dt capability Application oriented characterization Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB
8.11. Size:951K st
std10nm50n stf10nm50n stp10nm50n.pdf
STD10NM50NSTF10NM50N, STP10NM50NN-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STD10NM50N1TO-220FP TO-220STF10NM50N 550 V
8.12. Size:120K samhop
stu10n20 std10n20.pdf
STU10N20GreenProductSTD10N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.306 @ VGS=10VTO-252 and TO-251 Package.200V8A328 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (
8.13. Size:128K samhop
stu10n25 std10n25.pdf
STU10N25GreenProductSTD10N25aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.250V 9A 258 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKABS
8.14. Size:1487K cn vbsemi
std10nf06.pdf
STD10NF06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters
8.15. Size:905K cn vbsemi
std10nf10t4.pdf
STD10NF10T4www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI
8.16. Size:208K inchange semiconductor
std10nm65n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD10NM65NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T
8.17. Size:208K inchange semiconductor
std10nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD10NM60NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: SSW4N90AS
, SSW5N80A
, SSW5N90A
, SSW6N70A
, SSW7N60A
, STD10N10-1
, STD10N10L-1
, STD10N10LT4
, AO3400
, STD12N05
, STD12N05-1
, STD12N05L
, STD12N05L-1
, STD12N05LT4
, STD12N05T4
, STD12N06
, STD12N06-1
.