All MOSFET. STD10N10T4 Datasheet

 

STD10N10T4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD10N10T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DPAK

 STD10N10T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD10N10T4 Datasheet (PDF)

Datasheet: SSW4N90AS , SSW5N80A , SSW5N90A , SSW6N70A , SSW7N60A , STD10N10-1 , STD10N10L-1 , STD10N10LT4 , AO3400 , STD12N05 , STD12N05-1 , STD12N05L , STD12N05L-1 , STD12N05LT4 , STD12N05T4 , STD12N06 , STD12N06-1 .

 

 
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