SVS11N65FJD2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVS11N65FJD2
   Marking Code: 11N65FJD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20.76 nC
   trⓘ - Rise Time: 31.24 nS
   Cossⓘ - Output Capacitance: 45.12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO220FJ

SVS11N65FJD2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVS11N65FJD2 Datasheet (PDF)

..1. Size:447K silan
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SVS11N65D(F)(S)(FJ)D2 11A650VMOS 2SVS11N65D(F)(S)(FJ)D2 N MOSFET MOS 11 3SVS11N65D(F)(S)(FJ)D2

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svs11n65fjd2.pdf

SVS11N65FJD2_Datasheet 11A, 650V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N65FJD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore,

5.1. Size:382K silan
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