SVS20N60PND2 Specs and Replacement
Type Designator: SVS20N60PND2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO3P
SVS20N60PND2 substitution
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SVS20N60PND2 datasheet
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svs20n60fjd2 svs20n60kd2 svs20n60td2 svs20n60pnd2 svs20n60sd2 svs20n60sd2tr svs20n60p7d2.pdf
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Detailed specifications: SVF8N60T, SVF8N60F, SVF8N65T, SVF8N65F, SVS11N65FJD2, SVS20N60FJD2, SVS20N60KD2, SVS20N60TD2, 2SK3878, SVS20N60SD2, SVS20N60SD2TR, SVS20N60P7D2, SVT044R5NT, SVT044R5ND, SVT044R5NL5, SVT088R0NT, SVT13N06SA
Keywords - SVS20N60PND2 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP2602MT | H2N60F
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