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SVT044R5NT Specs and Replacement

Type Designator: SVT044R5NT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 542 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO220

SVT044R5NT substitution

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SVT044R5NT datasheet

 ..1. Size:485K  silan
 svt044r5nt svt044r5nd svt044r5nl5.pdf pdf_icon

SVT044R5NT

SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana... See More ⇒

 ..2. Size:459K  silan
 svt044r5nt svt044r5ndtr svt044r5nl5tr.pdf pdf_icon

SVT044R5NT

SVT044R5NT/D/L5 178A 40V N 2 S D 1 8 SVT044R5NT/D/L5 N MOS S 2 7 D 1 D S 3 6 LVMOS G 4 5 D 3 ... See More ⇒

 9.1. Size:352K  silan
 svt043r0nt svt043r0nl5tr.pdf pdf_icon

SVT044R5NT

SVT043R0NT/L5 180A 40V N 2 S D 1 8 SVT043R0NT/L5 N MOS S 7 D 2 LVMOS 1 D S 3 6 G 4 5 D ... See More ⇒

 9.2. Size:353K  silan
 svt042r5nl5tr svt042r5nt.pdf pdf_icon

SVT044R5NT

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Detailed specifications: SVS11N65FJD2, SVS20N60FJD2, SVS20N60KD2, SVS20N60TD2, SVS20N60PND2, SVS20N60SD2, SVS20N60SD2TR, SVS20N60P7D2, IRF4905, SVT044R5ND, SVT044R5NL5, SVT088R0NT, SVT13N06SA, IXFA18N65X2, IXFA60N25X3, IXFA80N25X3, IXFH18N65X2

Keywords - SVT044R5NT MOSFET specs

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