SVT044R5NL5 MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVT044R5NL5
   Marking Code: 044R5NL5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 105 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 111 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 542 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: PDFN-8-5X6

SVT044R5NL5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVT044R5NL5 Datasheet (PDF)

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svt044r5nt svt044r5nd svt044r5nl5.pdf

SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana

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svt044r5nt svt044r5ndtr svt044r5nl5tr.pdf