IXFH90N20X3 MOSFET Datasheet: N-Ch, 200V, 90A. Full specification with pinout and replacement list

IXFH90N20X3 Specs and Replacement

Type Designator: IXFH90N20X3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm

Package: TO247

IXFH90N20X3 substitution

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IXFH90N20X3 datasheet

..1. Size:191K ixys
ixfp90n20x3 ixfq90n20x3 ixfh90n20x3.pdf pdf_icon

X3-Class HiPerFETTM VDSS = 200V IXFP90N20X3 Power MOSFET ID25 = 90A IXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3 N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXFP) G D D (Tab) S TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D S VGSS Continuous ... See More ⇒

9.1. Size:225K ixys
ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFH 96N20P PolarHTTM HiPerFET VDSS = 200 V IXFT 96N20P ID25 = 96 A Power MOSFET IXFV 96N20P RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V... See More ⇒

9.2. Size:204K ixys
ixfh8n80 ixfh9n80.pdf pdf_icon

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*... See More ⇒

9.3. Size:318K ixys
ixfh96n15p ixfv96n15p.pdf pdf_icon

IXFH 96N15P VDSS = 150 V PolarHTTM HiPerFET IXFV 96N15P ID25 = 96 A Power MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D (TAB) S VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 ... See More ⇒