IXFH90N20X3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFH90N20X3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 78 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 930 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm
Package: TO247
IXFH90N20X3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFH90N20X3 Datasheet (PDF)
ixfp90n20x3 ixfq90n20x3 ixfh90n20x3.pdf
X3-Class HiPerFETTM VDSS = 200VIXFP90N20X3Power MOSFET ID25 = 90AIXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3N-Channel Enhancement ModeAvalanche RatedTO-220AB (IXFP)GDD (Tab)STO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGVDGR TJ = 25C to 150C, RGS = 1M 200 VDSVGSS Continuous
ixfh96n20p ixft96n20p ixfv96n20p.pdf
IXFH 96N20PPolarHTTM HiPerFETVDSS = 200 VIXFT 96N20PID25 = 96 APower MOSFETIXFV 96N20P RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 V
ixfh8n80 ixfh9n80.pdf
Preliminary Data SheetVDSS ID25 RDS(on) trrHiPerFETTMIXFH8N80 800V 8A 1.1 250 nsIXFH9N80 800V 9A 0.9 250 nsPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 V TO-247 SMD*
ixfh96n15p ixfv96n15p.pdf
IXFH 96N15P VDSS = 150 VPolarHTTM HiPerFETIXFV 96N15P ID25 = 96 APower MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche Energy RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGD(TAB)SVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175
ixfh94n30t ixft94n30t.pdf
Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFT94N30TPower MOSFETs ID25 = 94AIXFH94N30T RDS(on) 36m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VTO-247 (I
ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf
Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
