IXFK50N85X MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFK50N85X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 850 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 152 nC
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 4863 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO264
IXFK50N85X Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFK50N85X Datasheet (PDF)
ixft50n85xhv ixfh50n85x ixfk50n85x.pdf
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X-Class HiPerFETTM VDSS = 850VIXFT50N85XHVPower MOSFET ID25 = 50AIXFH50N85X RDS(on) 105m IXFK50N85XTO-268HV (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeS D (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Co
ixfk50n50 ixfn50n50 ixfk55n50 ixfn55n50.pdf
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VDSS ID25 RDS(on) trrHiPerFETTMPower MOSFET IXFN 55N50 500V 55A 80m 250nsIXFN 50N50 500V 50A 100m 250nsIXFK 55N50 500V 55A 80m 250nsSingle Die MOSFETIXFK 50N50 500V 50A 100m 250nsPreliminary data sheetTO-264 AA (IXFK)Symbol Test Conditions Maximum Ratings IXFNIXFK IXFK IXFN55N50 50N50 55N50 50N50VDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C to 150C
ixfk55n50 ixfx55n50 ixfn55n50.pdf
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VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2
ixfk520n075t2 ixfx520n075t2.pdf
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Advance Technical InformationTrenchT2TM GigaMOSTMVDSS = 75VIXFK520N075T2HiperFETTMID25 = 520AIXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C75 V TabDSVDGR TJ = 25C to 175C, RGS = 1M 75 VV
ixfh52n30q ixfk52n30q ixft52n30q.pdf
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IXFH 52N30QHiPerFETTMVDSS = 300 VIXFK 52N30QPower MOSFETs ID25 = 52 AIXFT 52N30QQ-Class RDS(on) = 60 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .