BSC0504NSI Datasheet and Replacement
Type Designator: BSC0504NSI
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
SUPERSO8
- MOSFET Cross-Reference Search
BSC0504NSI Datasheet (PDF)
..1. Size:1570K infineon
bsc0504nsi.pdf 
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0504NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.1. Size:485K infineon
bsc050n03ms.pdf 
BSC050N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS
8.2. Size:1364K infineon
bsc050n10ns5.pdf 
BSC050N10NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 175C ratedProduct Validation:Qualified for
8.3. Size:548K infineon
bsc050n03msg5.pdf 
% ! % D %0S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7D?3> D7
8.4. Size:1634K infineon
bsc050ne2ls .pdf 
n-Channel Power MOSFETOptiMOSBSC050NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC050NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO
8.5. Size:482K infineon
bsc050n03ls.pdf 
BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
8.6. Size:520K infineon
bsc050n04lsg.pdf 
BSC050N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.0 mW Optimized technology for DC/DC convertersID 85 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
8.7. Size:1561K infineon
bsc0503nsi.pdf 
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0503NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.8. Size:830K infineon
bsc050ne2ls.pdf 
BSC050NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 58 A 100% avalanche testedQGD 1.3 nC Superior thermal resistanceQG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
8.9. Size:691K infineon
bsc050n03ls .pdf 
& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*-m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>
8.10. Size:522K infineon
bsc050n03lsg.pdf 
BSC050N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 80 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
8.11. Size:1580K infineon
bsc0502nsi.pdf 
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0502NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
8.12. Size:1555K infineon
bsc0501nsi.pdf 
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 30 VBSC0501NSISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
History: BSZ035N03LSG
| SVF9N90F
Keywords - BSC0504NSI MOSFET datasheet
BSC0504NSI cross reference
BSC0504NSI equivalent finder
BSC0504NSI lookup
BSC0504NSI substitution
BSC0504NSI replacement