BSC072N04LD Specs and Replacement
Type Designator: BSC072N04LD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 680 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TDSON-8-4
BSC072N04LD substitution
- MOSFET ⓘ Cross-Reference Search
BSC072N04LD datasheet
bsc072n04ld.pdf
BSC072N04LD MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 40 V 8 1 7 Features 2 6 3 5 4 Dual N-channel, logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant 1 8 2 7 100% Avalanche tested 3 6 5 4 Halogen-free according to IEC61249-2-21 Superior thermal resistance Product Va... See More ⇒
bsc072n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC072N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC072N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re... See More ⇒
bsc072n03ld.pdf
BSC072N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 7.2 m DS(on),max I 20 A Fast switching MOSFETs for SMPS D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on... See More ⇒
Detailed specifications: BSC0503NSI, BSC0504NSI, BSC050N10NS5, BSC059N04LS6, BSC065N06LS5, BSC0702LS, BSC070N10LS5, BSC070N10NS5SC, AON7403, BSC074N15NS5, BSC076N04ND, BSC0804LS, BSC0805LS, BSC093N15NS5, BSC094N06LS5, BSC096N10LS5, BSC097N06NST
Keywords - BSC072N04LD MOSFET specs
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