BSC160N15NS5 Datasheet and Replacement
Type Designator: BSC160N15NS5
Marking Code: 160N15NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 19 nC
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 341 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SUPERSO8
BSC160N15NS5 substitution
BSC160N15NS5 Datasheet (PDF)
bsc160n15ns5.pdf

BSC160N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr)4 150 C operating temperature132 2 Pb-free lead plating; RoHS compliant3 14 Qualified according to JEDEC
bsc160n10ns3 bsc160n10ns3g.pdf

TypeBSC160N10NS3 GTM 3 Power-TransistorProduct SummaryVDS 100 V9 .1)+ )7%$ &-/ $# $# # -,3%/0)-,RDS(on),max 16m 9 # (!,,%* ,-/+ !* *%3%*ID 42 A9 5# %**%,1 '!1% # (!/'% 5 R product (FOM)DS(on)9 %/6 *-4 -, /%0)01!,# % RDS(on)PG-TDSON-89 8 -.%/!1),' 1%+ .%/!12/%9 " &/%% *%!$ .*!1),' - # -+ .*)!,11)9 2!*)&)%$ !# # -/$),' 1- for target application9 !*-'%, &/%%
bsc16dn25ns3 bsc16dn25ns3g.pdf

TypeBSC16DN25NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V Optimized for dc-dc conversionRDS(on),max 165mW N-channel, normal levelID 10.9 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Keywords - BSC160N15NS5 MOSFET datasheet
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