BSZ017NE2LS5I PDF and Equivalents Search

 

BSZ017NE2LS5I Specs and Replacement

Type Designator: BSZ017NE2LS5I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: TSDSON-8

BSZ017NE2LS5I substitution

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BSZ017NE2LS5I datasheet

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BSZ017NE2LS5I

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 9.1. Size:1404K  infineon
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BSZ017NE2LS5I

n-Channel Power MOSFET OptiMOS BSZ019N03LS Data Sheet 2.1, 2011-09-21 Final Industrial & Multimarket OptiMOS Power-MOSFET BSZ019N03LS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS... See More ⇒

 9.2. Size:1216K  infineon
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BSZ017NE2LS5I

BSZ011NE2LS5I MOSFET TSDSON-8 FL OptiMOSTM5 Power-Transistor, 25 V (enlarged source interconnection) Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R @ V =4.5V DS(on) GS 100% avalanche tested N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Pr... See More ⇒

 9.3. Size:1646K  infineon
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BSZ017NE2LS5I

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Detailed specifications: BSC160N15NS5, BSC350N20NSFD, BSF450NE7NH3G, BSS340NW, BSZ009NE2LS5, BSZ010NE2LS5, BSZ011NE2LS5I, BSZ013NE2LS5I, IRFB4110, BSZ018N04LS6, BSZ021N04LS6, BSZ024N04LS6, BSZ031NE2LS5, BSZ033NE2LS5, BSZ037N06LS5, BSZ039N06NS, BSZ040N06LS5

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