BSZ031NE2LS5 Specs and Replacement
Type Designator: BSZ031NE2LS5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 390 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TSDSON-8
BSZ031NE2LS5 substitution
- MOSFET ⓘ Cross-Reference Search
BSZ031NE2LS5 datasheet
bsz036ne2ls.pdf
For BSZ036NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 5.1 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS PG-TS... See More ⇒
bsz035n03ms bsz035n03msg.pdf
BSZ035N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 4.3 100% avalanche tested ID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FO... See More ⇒
Detailed specifications: BSZ009NE2LS5, BSZ010NE2LS5, BSZ011NE2LS5I, BSZ013NE2LS5I, BSZ017NE2LS5I, BSZ018N04LS6, BSZ021N04LS6, BSZ024N04LS6, IRFB4227, BSZ033NE2LS5, BSZ037N06LS5, BSZ039N06NS, BSZ040N06LS5, BSZ0500NSI, BSZ0589NS, BSZ063N04LS6, BSZ065N06LS5
Keywords - BSZ031NE2LS5 MOSFET specs
BSZ031NE2LS5 cross reference
BSZ031NE2LS5 equivalent finder
BSZ031NE2LS5 pdf lookup
BSZ031NE2LS5 substitution
BSZ031NE2LS5 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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