All MOSFET. BSZ063N04LS6 Datasheet

 

BSZ063N04LS6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ063N04LS6
   Marking Code: 63N04L6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TSDSON-8

 BSZ063N04LS6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ063N04LS6 Datasheet (PDF)

 ..1. Size:1511K  infineon
 bsz063n04ls6.pdf

BSZ063N04LS6 BSZ063N04LS6

BSZ063N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

 9.1. Size:657K  infineon
 bsz065n03ls.pdf

BSZ063N04LS6 BSZ063N04LS6

For BSZ065N03LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 6.5 mW Very low FOMQOSS for High Frequency SMPSVGS=4.5 V 8.6 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 V PG-TSDSON-8 (fu

 9.2. Size:455K  infineon
 bsz067n06ls3 bsz067n06ls3g.pdf

BSZ063N04LS6 BSZ063N04LS6

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 9.3. Size:691K  infineon
 bsz068n06ns.pdf

BSZ063N04LS6 BSZ063N04LS6

TypeBSZ068N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 6.8 mW Superior thermal resistanceID 40 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliantPG-TSD

 9.4. Size:1445K  infineon
 bsz065n06ls5.pdf

BSZ063N04LS6 BSZ063N04LS6

BSZ065N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Tab

 9.5. Size:699K  infineon
 bsz060ne2ls.pdf

BSZ063N04LS6 BSZ063N04LS6

For BSZ060NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA) Very Low FOMQOSS for High Frequency SMPS RDS(on),max VGS=10 V 6 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 8.1 Excellent gate charge x R product (FOM) ID 40 A DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TSDSON-

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