All MOSFET. BSZ099N06LS5 Datasheet

 

BSZ099N06LS5 Datasheet and Replacement


   Type Designator: BSZ099N06LS5
   Marking Code: 099N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0099 Ohm
   Package: TSDSON-8
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BSZ099N06LS5 Datasheet (PDF)

 ..1. Size:1458K  infineon
bsz099n06ls5.pdf pdf_icon

BSZ099N06LS5

BSZ099N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor,60V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Table

 8.1. Size:1457K  infineon
bsz0994ns.pdf pdf_icon

BSZ099N06LS5

BSZ0994NSMOSFETTSDSON-8 FLOptiMOSTM Power-MOSFET, 30 V(enlarged source interconnection)Features Optimized for high performance Wireless charger Very low FOM for High Frequency SMPSQOSS Low FOM for High Frequency SMPSSW Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior the

 9.1. Size:1391K  infineon
bsz097n10ns5.pdf pdf_icon

BSZ099N06LS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSZ097N10NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSZ097N10NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching Optimized technology for DC/DC converters E

 9.2. Size:1453K  infineon
bsz0909ns rev3.2.pdf pdf_icon

BSZ099N06LS5

n-Channel Power MOSFETOptiMOSBSZ0909NS Data Sheet3.2, 2011-09-22Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXCY01N90E

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