All MOSFET. IMW120R045M1 Datasheet

 

IMW120R045M1 Datasheet and Replacement


   Type Designator: IMW120R045M1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 228 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: TO247
 

 IMW120R045M1 substitution

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IMW120R045M1 Datasheet (PDF)

 ..1. Size:1393K  infineon
 imw120r045m1.pdf pdf_icon

IMW120R045M1

IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET DrainFeatures pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Sourcepin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus

 0.1. Size:1365K  infineon
 aimw120r045m1.pdf pdf_icon

IMW120R045M1

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

 6.1. Size:1124K  infineon
 imw120r060m1h.pdf pdf_icon

IMW120R045M1

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 6.2. Size:1125K  infineon
 imw120r090m1h.pdf pdf_icon

IMW120R045M1

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

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Datasheet: BSZ146N10LS5 , BSZ300N15NS5 , BTS247Z , IAUC100N10S5N040 , IAUC120N04S6L008 , IAUC120N04S6N009 , IAUS180N04S4N015 , IMW120R030M1H , 2SK3568 , IMW120R060M1H , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H .

Keywords - IMW120R045M1 MOSFET datasheet

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