All MOSFET. STD15N06-1 Datasheet

 

STD15N06-1 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD15N06-1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 700 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: IPAK

STD15N06-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STD15N06-1 Datasheet (PDF)

1.1. std15n06-.pdf Size:168K _st

STD15N06-1
STD15N06-1

STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06 60 V < 0.1 ? 15 A TYPICAL RDS(on) = 0.075 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-2

4.1. std15n.pdf Size:140K _st

STD15N06-1
STD15N06-1

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD15N06L 60 V < 0.1 ? 15 A TYPICAL RDS(on) = 0.075 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH

4.2. std15nf10.pdf Size:331K _st

STD15N06-1
STD15N06-1

STD15NF10 N-channel 100 V, 0.060 ?, 23 A, DPAK low gate charge STripFET II Power MOSFET Features VDSSS RDS(on) max ID Type STD15NF10 100 V < 0.065 ? 23 A 3 1 Exceptional dv/dt capability 100% avalanche tested DPAK Application oriented characterization Application Switching applications Figure 1. Internal schematic diagram Description This MOSFET series realized with STM

4.3. stu15n20_std15n20.pdf Size:148K _samhop

STD15N06-1
STD15N06-1

STU15N20 Green Product STD15N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 200V 15A 190 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK AB

Datasheet: STD12N05LT4 , STD12N05T4 , STD12N06 , STD12N06-1 , STD12N06L , STD12N06L-1 , STD12N06LT4 , STD12N06T4 , SPA11N60C3 , STD15N06L-1 , STD15N06LT4 , STD15N06T4 , STD17N05 , STD17N05-1 , STD17N05L , STD17N05L-1 , STD17N05LT4 .

 


STD15N06-1
  STD15N06-1
  STD15N06-1
  STD15N06-1
 
STD15N06-1
  STD15N06-1
  STD15N06-1
  STD15N06-1
 

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