IMW120R140M1H Specs and Replacement
Type Designator: IMW120R140M1H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.189 Ohm
Package: TO247
IMW120R140M1H substitution
- MOSFET ⓘ Cross-Reference Search
IMW120R140M1H datasheet
imw120r140m1h.pdf
IMW120R140M1H IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control... See More ⇒
imw120r060m1h.pdf
IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control... See More ⇒
imw120r090m1h.pdf
IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control... See More ⇒
aimw120r045m1.pdf
AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c... See More ⇒
Detailed specifications: IAUC100N10S5N040, IAUC120N04S6L008, IAUC120N04S6N009, IAUS180N04S4N015, IMW120R030M1H, IMW120R045M1, IMW120R060M1H, IMW120R090M1H, K4145, IMW120R220M1H, IMW120R350M1H, IMW65R027M1H, IMW65R048M1H, IMW65R072M1H, IMW65R107M1H, IMZ120R030M1H, IMZ120R060M1H
Keywords - IMW120R140M1H MOSFET specs
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