All MOSFET. STD15N06L-1 Datasheet

 

STD15N06L-1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STD15N06L-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: IPAK

 STD15N06L-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD15N06L-1 Datasheet (PDF)

 ..1. Size:140K  1
std15n06l std15n06l-1 std15n06lt4.pdf

STD15N06L-1
STD15N06L-1

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

 6.1. Size:506K  1
std15n06 std15n06-1 std15n06t4.pdf

STD15N06L-1
STD15N06L-1

 6.2. Size:168K  st
std15n06-.pdf

STD15N06L-1
STD15N06L-1

STD15N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06 60 V

 8.1. Size:331K  st
std15nf10.pdf

STD15N06L-1
STD15N06L-1

STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V

 8.2. Size:868K  st
stb15n65m5 std15n65m5.pdf

STD15N06L-1
STD15N06L-1

STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

 8.3. Size:329K  st
std15nf10t4.pdf

STD15N06L-1
STD15N06L-1

STD15NF10N-channel 100 V, 0.060 , 23 A, DPAKlow gate charge STripFET II Power MOSFETFeaturesVDSSS RDS(on) max IDTypeSTD15NF10 100 V

 8.4. Size:1087K  st
std15n65m5.pdf

STD15N06L-1
STD15N06L-1

STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V

 8.5. Size:788K  st
std15n50m2ag.pdf

STD15N06L-1
STD15N06L-1

STD15N50M2AG Automotive-grade N-channel 500 V, 0.336 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STD15N50M2AG 500 V 0.380 10 A 85 W Designed for automotive applications and AEC-Q101 qualified Extremely low gate charge Excellent output capacitance (C ) profile OSS

 8.6. Size:140K  st
std15n.pdf

STD15N06L-1
STD15N06L-1

STD15N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD15N06L 60 V

 8.7. Size:148K  samhop
stu15n20 std15n20.pdf

STD15N06L-1
STD15N06L-1

STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB

 8.8. Size:208K  inchange semiconductor
std15nf10t4.pdf

STD15N06L-1
STD15N06L-1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD15NF10T4FEATURESWith To-252(DPAK) packageApplication oriented characterizationExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: STD12N05T4 , STD12N06 , STD12N06-1 , STD12N06L , STD12N06L-1 , STD12N06LT4 , STD12N06T4 , STD15N06-1 , MMD60R360PRH , STD15N06LT4 , STD15N06T4 , STD17N05 , STD17N05-1 , STD17N05L , STD17N05L-1 , STD17N05LT4 , STD17N05T4 .

 

 
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