All MOSFET. IMZ120R350M1H Datasheet

 

IMZ120R350M1H Datasheet and Replacement


   Type Designator: IMZ120R350M1H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 0.7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.468 Ohm
   Package: TO247-4
      - MOSFET Cross-Reference Search

 

IMZ120R350M1H Datasheet (PDF)

 ..1. Size:1317K  infineon
imz120r350m1h.pdf pdf_icon

IMZ120R350M1H

IMZ120R350M1H IMZ120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.1. Size:1224K  infineon
imz120r090m1h.pdf pdf_icon

IMZ120R350M1H

IMZ120R090M1H IMZ120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.2. Size:1223K  infineon
imz120r140m1h.pdf pdf_icon

IMZ120R350M1H

IMZ120R140M1H IMZ120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

 7.3. Size:1223K  infineon
imz120r060m1h.pdf pdf_icon

IMZ120R350M1H

IMZ120R060M1H IMZ120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Drainpin 1 Very low switching losses Gate Threshold-free on state characteristic pin 4 Benchmark gate threshold voltage, V = 4.5V GS(th)Sense Source 0V turn-off gate voltage for easy and simple gate drive pin 3 pin 2 Fully controllable dV/dt Robust

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5

Keywords - IMZ120R350M1H MOSFET datasheet

 IMZ120R350M1H cross reference
 IMZ120R350M1H equivalent finder
 IMZ120R350M1H lookup
 IMZ120R350M1H substitution
 IMZ120R350M1H replacement

 

 
Back to Top

 


 
.