All MOSFET. IPA70R900P7S Datasheet

 

IPA70R900P7S Datasheet and Replacement


   Type Designator: IPA70R900P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220FP
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IPA70R900P7S Datasheet (PDF)

 ..1. Size:1138K  infineon
ipa70r900p7s.pdf pdf_icon

IPA70R900P7S

IPA70R900P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,

 8.1. Size:1101K  infineon
ipa70r600p7s.pdf pdf_icon

IPA70R900P7S

IPA70R600P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,

 8.2. Size:917K  infineon
ipa70r360p7s 70s360p7.pdf pdf_icon

IPA70R900P7S

IPA70R360P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,

 8.3. Size:1150K  infineon
ipa70r750p7s.pdf pdf_icon

IPA70R900P7S

IPA70R750P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

Keywords - IPA70R900P7S MOSFET datasheet

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