IPA70R900P7S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA70R900P7S
Marking Code: 70S900P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.8 nC
trⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220FP
IPA70R900P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA70R900P7S Datasheet (PDF)
ipa70r900p7s.pdf
IPA70R900P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
ipa70r600p7s.pdf
IPA70R600P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
ipa70r360p7s 70s360p7.pdf
IPA70R360P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting,
ipa70r750p7s.pdf
IPA70R750P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
ipa70r360p7s.pdf
IPA70R360P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
ipa70r450p7s.pdf
IPA70R450P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV,
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: APM4412K
History: APM4412K
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918