IPA80R750P7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA80R750P7
Marking Code: 80R750P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220FP
IPA80R750P7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA80R750P7 Datasheet (PDF)
ipa80r750p7.pdf
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ipa80r650ce.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R460CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa80r1k0ce.pdf
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ipa80r1k4ce.pdf
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ipa80r650ce.pdf
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ipa80r310ce.pdf
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