IPA95R750P7 Datasheet. Specs and Replacement

Type Designator: IPA95R750P7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 950 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220FP

IPA95R750P7 substitution

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IPA95R750P7 datasheet

 ..1. Size:1113K  infineon
 ipa95r750p7.pdf pdf_icon

IPA95R750P7

IPA95R750P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D... See More ⇒

 8.1. Size:1087K  infineon
 ipa95r1k2p7.pdf pdf_icon

IPA95R750P7

IPA95R1K2P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D... See More ⇒

 8.2. Size:1119K  infineon
 ipa95r450p7.pdf pdf_icon

IPA95R750P7

IPA95R450P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D... See More ⇒

 8.3. Size:279K  inchange semiconductor
 ipa95r450p7.pdf pdf_icon

IPA95R750P7

isc N-Channel MOSFET Transistor IPA95R450P7 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 950V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so... See More ⇒

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Detailed specifications: IPA80R280P7, IPA80R360P7, IPA80R450P7, IPA80R600P7, IPA80R750P7, IPA80R900P7, IPA95R1K2P7, IPA95R450P7, AO4407A, IPAN60R125PFD7S, IPAN60R210PFD7S, IPAN60R280P7S, IPAN60R280PFD7S, IPAN60R360P7S, IPAN60R360PFD7S, IPAN60R600P7S, IPAN70R360P7S

Keywords - IPA95R750P7 MOSFET specs

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