All MOSFET. STD17N05L Datasheet

 

STD17N05L Datasheet and Replacement


   Type Designator: STD17N05L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 350 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: DPAK
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STD17N05L Datasheet (PDF)

 ..1. Size:350K  st
 std17n05l std17n06l.pdf pdf_icon

STD17N05L

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 0.1. Size:350K  1
 std17n05l-1 std17n06l-1 std17n05lt4 std17n06lt4.pdf pdf_icon

STD17N05L

STD17N05LSTD17N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTD17N05L 50 V

 6.1. Size:180K  1
 std17n05 std17n05-1 std17n05t4 std17n06 std17n06-1 std17n06t4.pdf pdf_icon

STD17N05L

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

 6.2. Size:180K  st
 std17n05.pdf pdf_icon

STD17N05L

STD17N05STD17N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD17N05 50 V

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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

Keywords - STD17N05L MOSFET datasheet

 STD17N05L cross reference
 STD17N05L equivalent finder
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