All MOSFET. IPAN70R360P7S Datasheet

 

IPAN70R360P7S Datasheet and Replacement


   Type Designator: IPAN70R360P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220FP
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IPAN70R360P7S Datasheet (PDF)

 ..1. Size:935K  infineon
ipan70r360p7s.pdf pdf_icon

IPAN70R360P7S

IPAN70R360P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

 7.1. Size:947K  infineon
ipan70r900p7s.pdf pdf_icon

IPAN70R360P7S

IPAN70R900P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

 7.2. Size:954K  infineon
ipan70r750p7s.pdf pdf_icon

IPAN70R360P7S

IPAN70R750P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

 7.3. Size:952K  infineon
ipan70r450p7s.pdf pdf_icon

IPAN70R360P7S

IPAN70R450P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CIM6N120-220F | CED05N8 | AON6794 | IRLR024 | UT3N06G-TM3-T | BUZ84 | BL10N70-A

Keywords - IPAN70R360P7S MOSFET datasheet

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