All MOSFET. IPAN70R900P7S Datasheet

 

IPAN70R900P7S Datasheet and Replacement


   Type Designator: IPAN70R900P7S
   Marking Code: 70S900P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6.8 nC
   tr ⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220FP
 

 IPAN70R900P7S substitution

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IPAN70R900P7S Datasheet (PDF)

 ..1. Size:947K  infineon
 ipan70r900p7s.pdf pdf_icon

IPAN70R900P7S

IPAN70R900P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

 7.1. Size:954K  infineon
 ipan70r750p7s.pdf pdf_icon

IPAN70R900P7S

IPAN70R750P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

 7.2. Size:952K  infineon
 ipan70r450p7s.pdf pdf_icon

IPAN70R900P7S

IPAN70R450P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

 7.3. Size:935K  infineon
 ipan70r360p7s.pdf pdf_icon

IPAN70R900P7S

IPAN70R360P7SMOSFETPG-TO 220 FP700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting

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History: IPU80R1K4P7

Keywords - IPAN70R900P7S MOSFET datasheet

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