All MOSFET. IPAW60R600CE Datasheet

 

IPAW60R600CE Datasheet and Replacement


   Type Designator: IPAW60R600CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220FPWC
 

 IPAW60R600CE substitution

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IPAW60R600CE Datasheet (PDF)

 ..1. Size:979K  infineon
 ipaw60r600ce.pdf pdf_icon

IPAW60R600CE

IPAW60R600CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 4.1. Size:1083K  infineon
 ipaw60r600p7s.pdf pdf_icon

IPAW60R600CE

IPAW60R600P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 7.1. Size:1094K  infineon
 ipaw60r280p7s.pdf pdf_icon

IPAW60R600CE

IPAW60R280P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 7.2. Size:991K  infineon
 ipaw60r380ce.pdf pdf_icon

IPAW60R600CE

IPAW60R380CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

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Datasheet: IPAN80R280P7 , IPAN80R360P7 , IPAN80R450P7 , IPAW60R180P7S , IPAW60R190CE , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IRF3710 , IPAW60R600P7S , IPAW70R600CE , IPAW70R950CE , IPB017N10N5LF , IPB019N08N5 , IPB024N10N5 , IPB032N10N5 , IPB060N15N5 .

History: 2SK1215F | TPB50R250C

Keywords - IPAW60R600CE MOSFET datasheet

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