IPAW70R600CE MOSFET Datasheet: N-Ch, 700V, 10.5A. Full specification with pinout and replacement list

IPAW70R600CE Specs and Replacement

Type Designator: IPAW70R600CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220FPWC

IPAW70R600CE substitution

- MOSFET ⓘ Cross-Reference Search

IPAW70R600CE datasheet

..1. Size:994K infineon
ipaw70r600ce.pdf pdf_icon

IPAW70R600CE MOSFET PG - TO220 FullPAK WideCreepage 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market... See More ⇒

7.1. Size:949K infineon
ipaw70r950ce.pdf pdf_icon

IPAW70R950CE MOSFET PG - TO220 FullPAK WideCreepage 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market... See More ⇒

Detailed specifications: IPAN80R450P7, IPAW60R180P7S, IPAW60R190CE, IPAW60R280CE, IPAW60R280P7S, IPAW60R380CE, IPAW60R600CE, IPAW60R600P7S, IRF3710, IPAW70R950CE, IPB017N10N5LF, IPB019N08N5, IPB024N10N5, IPB032N10N5, IPB060N15N5, IPB110P06LM, IPB120N03S4L-03