All MOSFET. IPAW70R600CE Datasheet

 

IPAW70R600CE Datasheet and Replacement


   Type Designator: IPAW70R600CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 86 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220FPWC
 

 IPAW70R600CE substitution

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IPAW70R600CE Datasheet (PDF)

 ..1. Size:994K  infineon
 ipaw70r600ce.pdf pdf_icon

IPAW70R600CE

IPAW70R600CEMOSFETPG - TO220 FullPAK WideCreepage700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 7.1. Size:949K  infineon
 ipaw70r950ce.pdf pdf_icon

IPAW70R600CE

IPAW70R950CEMOSFETPG - TO220 FullPAK WideCreepage700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

Datasheet: IPAN80R450P7 , IPAW60R180P7S , IPAW60R190CE , IPAW60R280CE , IPAW60R280P7S , IPAW60R380CE , IPAW60R600CE , IPAW60R600P7S , P55NF06 , IPAW70R950CE , IPB017N10N5LF , IPB019N08N5 , IPB024N10N5 , IPB032N10N5 , IPB060N15N5 , IPB110P06LM , IPB120N03S4L-03 .

History: WM03DN85A | SQJ964EP

Keywords - IPAW70R600CE MOSFET datasheet

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