All MOSFET. IPB060N15N5 Datasheet

 

IPB060N15N5 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB060N15N5

Marking Code: 060N15N5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.6 V

Maximum Drain Current |Id|: 136 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 54.5 nC

Rise Time (tr): 4.3 nS

Drain-Source Capacitance (Cd): 1000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: TO263-7

IPB060N15N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB060N15N5 Datasheet (PDF)

0.1. ipb060n15n5.pdf Size:1098K _infineon

IPB060N15N5
IPB060N15N5

IPB060N15N5MOSFETD-PAK 7pinOptiMOS5 Power-Transistor, 150 VFeatures Featurestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Q )rr1 175 C operating temperature Pb-free lead plating; RoHS compliant7 Qualified according to JEDEC1) for target application Ideal for high-f

9.1. ipb065n10n3g.pdf Size:1157K _infineon

IPB060N15N5
IPB060N15N5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GData SheetRev. 2.0FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GDPAK1 DescriptionFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175

9.2. ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Size:519K _infineon

IPB060N15N5
IPB060N15N5

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

 9.3. ipp070n08n3 ipp070n08n3 ipi070n08n3 ipb067n08n3.pdf Size:1021K _infineon

IPB060N15N5
IPB060N15N5

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

9.4. ipb06n03la.pdf Size:274K _infineon

IPB060N15N5
IPB060N15N5

IPB06N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.9mDS(on),max Qualified according to JEDEC1) for target applicationsI 50 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO263-3-2 Superior thermal res

 9.5. ipb065n15n3g.pdf Size:637K _infineon

IPB060N15N5
IPB060N15N5

IPB065N15N3 G 3 Power-TransistorProduct SummaryFeaturesV 150 VDSQ ' 381>>5?B=1

9.6. ipb065n03l.pdf Size:614K _infineon

IPB060N15N5
IPB060N15N5

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9.7. ipb065n06lg ipp065n06lg.pdf Size:738K _infineon

IPB060N15N5
IPB060N15N5

IPB065N06L G IPP065N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G P ( 381>>581>35=5>C

9.8. ipp070n08n3g ipi070n08n3g ipb067n08n3g.pdf Size:1013K _infineon

IPB060N15N5
IPB060N15N5

IPP070N08N3 G IPI070N08N3 GIPB067N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

9.9. ipb067n08n3.pdf Size:258K _inchange_semiconductor

IPB060N15N5
IPB060N15N5

Isc N-Channel MOSFET Transistor IPB067N08N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.10. ipb065n10n3.pdf Size:258K _inchange_semiconductor

IPB060N15N5
IPB060N15N5

Isc N-Channel MOSFET Transistor IPB065N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.11. ipb065n03l.pdf Size:242K _inchange_semiconductor

IPB060N15N5
IPB060N15N5

isc N-Channel MOSFET Transistor IPB065N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

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