BSZ100N06NS PDF and Equivalents Search

 

BSZ100N06NS Specs and Replacement

Type Designator: BSZ100N06NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TSDSON-8

BSZ100N06NS substitution

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BSZ100N06NS datasheet

 ..1. Size:691K  infineon
bsz100n06ns.pdf pdf_icon

BSZ100N06NS

Type BSZ100N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 10 mW Superior thermal resistance ID A 40 N-channel QOSS nC 14 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 12 Pb-free lead plating; RoHS compliant PG-TS... See More ⇒

 5.1. Size:467K  infineon
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BSZ100N06NS

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 6.1. Size:628K  infineon
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BSZ100N06NS

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 6.2. Size:631K  infineon
bsz100n03lsg.pdf pdf_icon

BSZ100N06NS

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Detailed specifications: BSC025N08LS5, BSC027N10NS5, BSC037N08NS5T, BSC079N03LSCG, BSC220N20NSFD, BSG0810NDI, BSZ018NE2LSI, BSZ068N06NS, STP80NF70, BSZ15DC02KDH, BSZ160N10NS3, BSZ215CH, DF11MR12W1M1PB11, DF23MR12W1M1PB11, F3L15MR12W2M1B69, FF45MR12W1M1B11, IAUA120N04S5N014

Keywords - BSZ100N06NS MOSFET specs

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