IAUC120N04S6N010 Datasheet and Replacement
Type Designator: IAUC120N04S6N010
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1602 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00103 Ohm
Package: TDSON-8
IAUC120N04S6N010 Datasheet (PDF)
iauc120n04s6n010.pdf

IAUC120N04S6N010OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.0mWID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste
iauc120n04s6n009.pdf

IAUC120N04S6N009OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 0.9mID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tes
iauc120n04s6n013.pdf

IAUC120N04S6N013OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.3mWID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SI7850DP | NTTFS4C06N | 2SK809
Keywords - IAUC120N04S6N010 MOSFET datasheet
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IAUC120N04S6N010 replacement
History: SI7850DP | NTTFS4C06N | 2SK809



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