All MOSFET. IAUC60N04S6N044 Datasheet

 

IAUC60N04S6N044 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUC60N04S6N044
   Marking Code: 6N04N044
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 257 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00452 Ohm
   Package: TDSON-8

 IAUC60N04S6N044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUC60N04S6N044 Datasheet (PDF)

 0.1. Size:666K  infineon
 iauc60n04s6n044.pdf

IAUC60N04S6N044 IAUC60N04S6N044

IAUC60N04S6N044OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.5mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

 3.1. Size:665K  infineon
 iauc60n04s6l039.pdf

IAUC60N04S6N044 IAUC60N04S6N044

IAUC60N04S6L039OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.0mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM4447

 

 
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