IAUC60N04S6N044 PDF and Equivalents Search

 

IAUC60N04S6N044 Specs and Replacement

Type Designator: IAUC60N04S6N044

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 257 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00452 Ohm

Package: TDSON-8

IAUC60N04S6N044 substitution

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IAUC60N04S6N044 datasheet

 0.1. Size:666K  infineon
 iauc60n04s6n044.pdf pdf_icon

IAUC60N04S6N044

IAUC60N04S6N044 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.5 mW ID 60 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

 3.1. Size:665K  infineon
 iauc60n04s6l039.pdf pdf_icon

IAUC60N04S6N044

IAUC60N04S6L039 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 4.0 mW ID 60 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

Detailed specifications: IAUC100N10S5L040, IAUC120N04S6L009, IAUC120N04S6L012, IAUC120N04S6N010, IAUC120N04S6N013, IAUC24N10S5L300, IAUC28N08S5L230, IAUC60N04S6L039, STP65NF06, IAUC70N08S5N074, IAUC80N04S6L032, IAUC80N04S6N036, IAUC90N10S5N062, IAUS165N08S5N029, IAUS200N08S5N023, IAUS240N08S5N019, IAUS300N08S5N014

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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