All MOSFET. IAUC60N04S6N044 Datasheet

 

IAUC60N04S6N044 Datasheet and Replacement


   Type Designator: IAUC60N04S6N044
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 257 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00452 Ohm
   Package: TDSON-8
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IAUC60N04S6N044 Datasheet (PDF)

 0.1. Size:666K  infineon
 iauc60n04s6n044.pdf pdf_icon

IAUC60N04S6N044

IAUC60N04S6N044OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.5mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

 3.1. Size:665K  infineon
 iauc60n04s6l039.pdf pdf_icon

IAUC60N04S6N044

IAUC60N04S6L039OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 4.0mWID 60 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | SM6A12NSFP | SPD04N60S5

Keywords - IAUC60N04S6N044 MOSFET datasheet

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