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IPA60R180P7S Spec and Replacement


   Type Designator: IPA60R180P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220FP

 IPA60R180P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPA60R180P7S Specs

 ..1. Size:763K  infineon
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IPA60R180P7S

IPA60R180P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE... See More ⇒

 3.1. Size:1110K  infineon
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IPA60R180P7S

IPA60R180P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET... See More ⇒

 5.1. Size:1140K  1
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IPA60R180P7S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPA60R180C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPA60R180C7 TO-220 FP 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and... See More ⇒

 5.2. Size:1165K  infineon
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IPA60R180P7S

IPA60R180C7 MOSFET PG-TO 220 FP 600V CoolMOS C7 Power Device CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever w... See More ⇒

Detailed specifications: IAUS300N08S5N014 , IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , 60N06 , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 .

History: PSMN6R7-40MLD

Keywords - IPA60R180P7S MOSFET specs

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