IPA60R180P7S MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA60R180P7S
Marking Code: 60S180P7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 26 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 18 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 19 pF
Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm
Package: TO220FP
IPA60R180P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA60R180P7S Datasheet (PDF)
0.1. ipa60r180p7s.pdf 
Size:763K _infineon
IPA60R180P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE
3.1. ipa60r180p7.pdf Size:1110K _infineon
IPA60R180P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET
5.1. ipa60r180c7.pdf Size:1140K _1
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPA60R180C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPA60R180C7TO-220 FP1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
5.2. ipa60r180c7.pdf Size:1165K _infineon
IPA60R180C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w
5.3. ipa60r180c7.pdf Size:223K _inchange_semiconductor
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R180C7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
