All MOSFET. IPAN65R650CE Datasheet

 

IPAN65R650CE MOSFET. Datasheet pdf. Equivalent

Type Designator: IPAN65R650CE

Marking Code: 65S650CE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 10.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.65 Ohm

Package: TO220FP

IPAN65R650CE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPAN65R650CE Datasheet (PDF)

0.1. ipan65r650ce.pdf Size:733K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN65R650CEMOSFETPG-TO 220 FP650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

9.1. ipan60r650ce.pdf Size:727K _1

IPAN65R650CE
IPAN65R650CE

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

9.2. ipan60r800ce.pdf Size:728K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R800CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

 9.3. ipan60r360p7s.pdf Size:1038K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R360P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

9.4. ipan60r280pfd7s.pdf Size:1177K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R280PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

 9.5. ipan60r210pfd7s.pdf Size:1115K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R210PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

9.6. ipan60r125pfd7s.pdf Size:1130K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R125PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

9.7. ipan60r650ce.pdf Size:727K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

9.8. ipan60r600p7s.pdf Size:1027K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R600P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

9.9. ipan60r280p7s.pdf Size:1044K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R280P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

9.10. ipan60r360pfd7s.pdf Size:1153K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R360PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

9.11. ipan60r180p7s.pdf Size:722K _infineon

IPAN65R650CE
IPAN65R650CE

IPAN60R180P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

9.12. ipan60r800ce.pdf Size:201K _inchange_semiconductor

IPAN65R650CE
IPAN65R650CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R800CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

9.13. ipan60r650ce.pdf Size:222K _inchange_semiconductor

IPAN65R650CE
IPAN65R650CE

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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