IPAN65R650CE PDF and Equivalents Search

 

IPAN65R650CE Specs and Replacement


   Type Designator: IPAN65R650CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220FP
 

 IPAN65R650CE substitution

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IPAN65R650CE datasheet

 ..1. Size:733K  infineon
ipan65r650ce.pdf pdf_icon

IPAN65R650CE

IPAN65R650CE MOSFET PG-TO 220 FP 650V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

 9.1. Size:727K  1
ipan60r650ce.pdf pdf_icon

IPAN65R650CE

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

 9.2. Size:727K  infineon
ipan60r650ce.pdf pdf_icon

IPAN65R650CE

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

 9.3. Size:1027K  infineon
ipan60r600p7s.pdf pdf_icon

IPAN65R650CE

IPAN60R600P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒

Detailed specifications: IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IRF730 , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 , IPB180N04S4L-H0 .

Keywords - IPAN65R650CE MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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