IPB015N04N6 Spec and Replacement
Type Designator: IPB015N04N6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 4000 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
Package: TO263
IPB015N04N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB015N04N6 Specs
ipp015n04n6 ipb015n04n6.pdf
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ipp015n04n ipb015n04n.pdf
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ipp015n04ng ipb015n04ng.pdf
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ipb015n04n.pdf
Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒
Detailed specifications: IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IRFZ44N , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 , IPB180N04S4L-H0 , IPB180N08S4-02 .
Keywords - IPB015N04N6 MOSFET specs
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