All MOSFET. IPB015N04N6 Datasheet

 

IPB015N04N6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPB015N04N6

Marking Code: 015N04N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 188 nC

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 4000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0015 Ohm

Package: TO263

IPB015N04N6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB015N04N6 Datasheet (PDF)

0.1. ipp015n04n6 ipb015n04n6.pdf Size:670K _infineon

IPB015N04N6
IPB015N04N6

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4.1. ipp015n04ng ipb015n04ng.pdf Size:673K _infineon

IPB015N04N6
IPB015N04N6

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4.2. ipp015n04n ipb015n04n.pdf Size:670K _infineon

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 4.3. ipb015n04n.pdf Size:257K _inchange_semiconductor

IPB015N04N6
IPB015N04N6

Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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