IPB015N04N6 Datasheet. Specs and Replacement

Type Designator: IPB015N04N6  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 4000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO263

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IPB015N04N6 datasheet

 ..1. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf pdf_icon

IPB015N04N6

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 4.1. Size:670K  infineon
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IPB015N04N6

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 4.2. Size:673K  infineon
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IPB015N04N6

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 4.3. Size:257K  inchange semiconductor
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IPB015N04N6

Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

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Detailed specifications: IGO60R070D1, IGOT60R070D1, IGT60R070D1, IGT60R190D1S, IPA60R180P7S, IPA60R360P7S, IPAN60R180P7S, IPAN65R650CE, IRFZ44N, IPB08CN10NG, IPB100N12S3-05, IPB120N10S4-03, IPB120N10S4-05, IPB120P04P4L-03, IPB180N04S4L-01, IPB180N04S4L-H0, IPB180N08S4-02

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