IPB120N10S4-05 Datasheet. Specs and Replacement

Type Designator: IPB120N10S4-05  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO263

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IPB120N10S4-05 datasheet

 ..1. Size:386K  infineon
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf pdf_icon

IPB120N10S4-05

IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 5.0 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒

 ..2. Size:356K  inchange semiconductor
ipb120n10s4-05.pdf pdf_icon

IPB120N10S4-05

isc N-Channel MOSFET Transistor IPB120N10S4-05 FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.3m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and ... See More ⇒

 1.1. Size:353K  infineon
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf pdf_icon

IPB120N10S4-05

IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch... See More ⇒

 7.1. Size:203K  infineon
ipb120n04s4l-02.pdf pdf_icon

IPB120N10S4-05

Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.7 m ID 120 A Features PG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120N04S4L-02 PG-TO263-3- 4N04L02 ... See More ⇒

Detailed specifications: IPA60R180P7S, IPA60R360P7S, IPAN60R180P7S, IPAN65R650CE, IPB015N04N6, IPB08CN10NG, IPB100N12S3-05, IPB120N10S4-03, 20N60, IPB120P04P4L-03, IPB180N04S4L-01, IPB180N04S4L-H0, IPB180N08S4-02, IPB180N10S4-02, IPB180N10S4-03, IPB180P04P4-03, IPB180P04P4L-02

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.