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IPB120P04P4L-03 Specs and Replacement


   Type Designator: IPB120P04P4L-03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 3410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO263
 

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IPB120P04P4L-03 Specs

 0.1. Size:430K  infineon
ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03.pdf pdf_icon

IPB120P04P4L-03

IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 3.1 mW ID -120 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test... See More ⇒

 3.1. Size:237K  infineon
ipb120p04p4-04 ipi120p04p4-04 ipp120p04p4-04.pdf pdf_icon

IPB120P04P4L-03

IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 3.5 mW ID -120 A Features P-channel - Normal Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested... See More ⇒

 8.1. Size:203K  infineon
ipb120n04s4l-02.pdf pdf_icon

IPB120P04P4L-03

Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.7 m ID 120 A Features PG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120N04S4L-02 PG-TO263-3- 4N04L02 ... See More ⇒

 8.2. Size:225K  infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf pdf_icon

IPB120P04P4L-03

IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested ... See More ⇒

Detailed specifications: IPA60R360P7S , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IRF540N , IPB180N04S4L-01 , IPB180N04S4L-H0 , IPB180N08S4-02 , IPB180N10S4-02 , IPB180N10S4-03 , IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 .

History: STD10NF10 | HUF76129P3

Keywords - IPB120P04P4L-03 MOSFET specs

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