IPB60R040CFD7 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB60R040CFD7
Marking Code: 60R040F7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 108 nC
Rise Time (tr): 19 nS
Drain-Source Capacitance (Cd): 85 pF
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO263
IPB60R040CFD7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB60R040CFD7 Datasheet (PDF)
ipb60r040cfd7.pdf
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ipb60r040c7.pdf
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ipb60r040c7.pdf
Isc N-Channel MOSFET Transistor IPB60R040C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipb60r045p7.pdf
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